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FSB50825B 数据表(PDF) 2 Page - ON Semiconductor |
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FSB50825B 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 14 page ![]() FSB50825B/FSB50825BS www.onsemi.com 2 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Conditions Rating Unit VPN DC Link Input Voltage, Drain−Source Voltage of Each MOSFET 250 V BVDSS Drain−Source Voltage VIN = 0V, ID = 250 mA 250 V IPN Zero−Bias Static Leakage Current VPN= 200V, VIN = 0V, VDD= VBS= 0V, TC= TJ = 25°C for all phase 40 mA ID 25 (Note 2) Each MOSFET Drain Current, Continuous TC = 25°C 3.6 A ID 80 (Note 2) Each MOSFET Drain Current, Continuous TC = 80°C 2.7 A IDP (Note 2) Each MOSFET Drain Current, Peak TC = 25°C, PW < 100 ms 9.0 A IDRMS (Note 2) Each FRFET Drain Current, Rms TC = 80°C, FPWM < 20 kHz 1.9 Arms PD (Note 2) Maximum Power Dissipation TC = 25°C, For Each MOSFET 14.2 W CONTROL PART (Each HVIC Unless Otherwise Specified) Symbol Parameter Conditions Rating Unit VDD Control Supply Voltage Applied Between VDD and COM 20 V VBS High−side Bias Voltage Applied Between VB and VS 20 V VIN Input Signal Voltage Applied Between IN and COM −0.3 ~ VDD+0.3 V BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified) Symbol Parameter Conditions Rating Unit VRRMB Maximum Repetitive Reverse Voltage 250 V IFB (Note 2) Forward Current TC = 25°C 0.5 A IFPB (Note 2) Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 1.5 A THERMAL RESISTANCE Symbol Parameter Conditions Rating Unit Inverter MOSFET part, (Per Module) 1.7 _C/W TOTAL SYSTEM Symbol Parameter Conditions Rating Unit TJ Operating Junction Temperature −40 ~ 150 _C TSTG Storage Temperature −40 ~ 125 _C VISO Isolation Voltage 60 Hz, Sinusoidal, 1 minute, Connec- tion Pins to Heatsink 1500 Vrms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. For the Measurement Point of Case Temperature TC, Please refer to Figure 5. 2. Calculation Value or Design Factor. 3. Using continuously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges. |
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