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FSB50825B 数据表(PDF) 2 Page - ON Semiconductor

部件名 FSB50825B
功能描述  Motion SPM 5 Series
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

FSB50825B 数据表(HTML) 2 Page - ON Semiconductor

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Conditions
Rating
Unit
VPN
DC Link Input Voltage,
Drain−Source Voltage of Each MOSFET
250
V
BVDSS
Drain−Source Voltage
VIN = 0V, ID = 250 mA
250
V
IPN
Zero−Bias Static Leakage Current
VPN= 200V, VIN = 0V,
VDD= VBS= 0V,
TC= TJ = 25°C for all phase
40
mA
ID 25 (Note 2)
Each MOSFET Drain Current, Continuous
TC = 25°C
3.6
A
ID 80 (Note 2)
Each MOSFET Drain Current, Continuous
TC = 80°C
2.7
A
IDP (Note 2)
Each MOSFET Drain Current, Peak
TC = 25°C, PW < 100 ms
9.0
A
IDRMS (Note 2) Each FRFET Drain Current, Rms
TC = 80°C, FPWM < 20 kHz
1.9
Arms
PD (Note 2)
Maximum Power Dissipation
TC = 25°C, For Each MOSFET
14.2
W
CONTROL PART (Each HVIC Unless Otherwise Specified)
Symbol
Parameter
Conditions
Rating
Unit
VDD
Control Supply Voltage
Applied Between VDD and COM
20
V
VBS
High−side Bias Voltage
Applied Between VB and VS
20
V
VIN
Input Signal Voltage
Applied Between IN and COM
−0.3 ~ VDD+0.3
V
BOOTSTRAP DIODE PART (Each Bootstrap Diode Unless Otherwise Specified)
Symbol
Parameter
Conditions
Rating
Unit
VRRMB
Maximum Repetitive Reverse Voltage
250
V
IFB (Note 2)
Forward Current
TC = 25°C
0.5
A
IFPB (Note 2)
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
1.5
A
THERMAL RESISTANCE
Symbol
Parameter
Conditions
Rating
Unit
Inverter MOSFET part, (Per Module)
1.7
_C/W
TOTAL SYSTEM
Symbol
Parameter
Conditions
Rating
Unit
TJ
Operating Junction Temperature
−40 ~ 150
_C
TSTG
Storage Temperature
−40 ~ 125
_C
VISO
Isolation Voltage
60 Hz, Sinusoidal, 1 minute, Connec-
tion Pins to Heatsink
1500
Vrms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. For the Measurement Point of Case Temperature TC, Please refer to Figure 5.
2. Calculation Value or Design Factor.
3. Using continuously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges.



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