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FSL136HRL 数据表(PDF) 4 Page - ON Semiconductor |
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FSL136HRL 数据表(HTML) 4 Page - ON Semiconductor |
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4 / 15 page ![]() FSL136HR www.onsemi.com 4 ABSOLUTE MAXIMUM RATINGS (continued)(TJ = 25°C unless otherwise specified) (continued) Symbol Unit Max Min Parameter QJA Junction−to−Ambient Thermal Resistance (Note 7, 8) − 80 °C/W QJC Junction−to−Case Thermal Resistance (Note 7, 9) − 19 QJT Junction−to−Top Thermal Resistance (Note 7, 10) − 33.7 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4. Repetitive rating: pulse width limited by maximum junction temperature. 5. L = 51 mH, starting TJ = 25°C. 6. Meets JEDEC standards JESD 22−A114 and JESD 22−C101. 7. All items are tested with the standards JESD 51−2 and JESD 51−10. 8. QJA free−standing, with no heat−sink, under natural convection. 9. QJC junction−to−lead thermal characteristics under QJA test condition. TC is measured on the source #7 pin closed to plastic interface for QJA thermo−couple mounted on soldering. 10.QJT junction−to−top of thermal characteristic under QJA test condition. Tt is measured on top of package. Thermo−couple is mounted in epoxy glue. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter Test Condition Min Typ Max Unit SENSEFET SECTION BVDSS Drain−Source Breakdown Voltage VCC = 0 V, ID = 250 mA 650 − − V IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 250 mA RDS(ON) Drain−Source On−State Resistance VGS = 10 V, VGS = 0 V, TC = 25°C − 3.5 4.0 W CISS Input Capacitance VGS = 0 V, VDS = 25 V, f = 1MHz − 290 − pF COSS Output Capacitance VGS = 0 V, VDS = 25 V, f = 1MHz − 45 − pF CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = 25 V, f = 1MHz − 5.5 − pF td(on) Turn−on Delay VDD = 350 V, ID = 3.5 A − 12 − ns tr Rise Time VDD = 350 V, ID = 3.5 A − 22 − ns td(off) Turn−off Delay VDD = 350 V, ID = 3.5 A − 20 − ns tf Fall Time VDD = 350 V, ID = 3.5 A − 19 − ns CONTROL SECTION fOSC Switching Frequency VDS = 650 V, VGS = 0 V 90 100 110 kHz DfOSC Switching Frequency Variation VGS = 10 V, VGS = 0 V, TC = 125°C − ±5 ±10 % fFM Frequency Modulation − ±3 − kHz DMAX Maximum Duty Cycle VFB = 4 V 71 77 83 % DMIN Minimum Duty Ratio VFB = 0 V 0 0 0 % VSTART UVLO Threshold Voltage 11 12 13 V VSTOP After Turn−on 7.0 8.0 9.0 V IFB Feedback Source Current VFB = 0 320 400 480 mA tS/S Internal Soft−Start Time VFB = 4 V 15 20 25 ms BURST−MODE SECTION VBURH Burst−Mode Voltage TJ = 25°C 0.4 0.5 0.6 V VBURL 0.25 0.35 0.45 V VBURH(HYS) − 150 − mV PROTECTION SECTION ILIM Peak Current Limit TJ = 25°C, di/dt = 300 mA/ms 1.89 2.15 2.41 A tCLD Current Limit Delay Time (Note 11) 200 − − ns VSD Shutdown Feedback Voltage VCC = 15 V 5.5 6.0 6.5 V |
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