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FSL136HRL 数据表(PDF) 8 Page - ON Semiconductor |
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FSL136HRL 数据表(HTML) 8 Page - ON Semiconductor |
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8 / 15 page ![]() FSL136HR www.onsemi.com 8 FUNCTIONAL DESCRIPTION Startup At startup, an internal high−voltage current source supplies the internal bias and charges the external capacitor (CA) connected with the VCC pin, as illustrated in Figure 14. When VCC reaches the start voltage of 12 V, the power switch begins switching and the internal high−voltage current source is disabled. The power switch continues normal switching operation and the power is provided from the auxiliary transformer winding unless VCC goes below the stop voltage of 8 V. Figure 14. Startup Circuit Oscillator Block The oscillator frequency is set internally and the power switch has a random frequency fluctuation function. Fluctuation of the switching frequency of a switched power supply can reduce EMI by spreading the energy over a wider frequency range than the bandwidth measured by the EMI test equipment. The amount of EMI reduction is directly related to the range of the frequency variation. The range of frequency variation is fixed internally; however, its selection is randomly chosen by the combination of external feedback voltage and internal free−running oscillator. This randomly chosen switching frequency effectively spreads the EMI noise nearby switching frequency and allows the use of a cost− effective inductor instead of an AC input line filter to satisfy the world−wide EMI requirements. Figure 15. Frequency Fluctuation Waveform Feedback Control FSL136HR employs current−mode control, as shown in Figure 16. An opto−coupler (such as the FOD817A) and shunt regulator (such as the KA431) are typically used to implement the feedback network. Comparing the feedback voltage with the voltage across the RSENSE resistor makes it possible to control the switching duty cycle. When the shunt regulator reference pin voltage exceeds the internal reference voltage of 2.5 V, the optocoupler LED current increases, the feedback voltage VFB is pulled down, and the duty cycle is reduced. This typically occurs when the input voltage is increased or the output load is decreased. Figure 16. Pulse−Width−Modulation Circuit Leading−Edge Blanking (LEB) At the instant the internal SENSEFET is turned on, the primary−side capacitance and secondary−side rectifier diode reverse recovery typically cause a high−current spike through the SENSEFET. Excessive voltage across the RSENSE resistor leads to incorrect feedback operation in the current−mode PWM control. To counter this effect, the power switch employs a leading−edge blanking (LEB) circuit (see the Figure 16). This circuit inhibits the PWM comparator for a short time (tLEB) after the SENSEFET is turned on. Protection Circuit The power switch has several protective functions, such as overload protection (OLP), over−voltage protection (OVP), output−short protection (OSP), under−voltage lockout (UVLO), abnormal over−current protection (AOCP), and thermal shutdown (TSD). Because these various protection circuits are fully integrated in the IC without external components, the reliability is improved without increasing cost. Once a fault condition occurs, switching is terminated and the SENSEFET remains off. This causes VCC to fall. When VCC reaches the UVLO stop voltage, VSTOP (8 V), the protection is reset and the internal high−voltage current source charges the VCC capacitor via the VSTR pin. When VCC reaches the UVLO start voltage, VSTART (12 V), the power switch resumes normal operation. In this manner, the auto−restart can alternately enable and disable the switching of the power SENSEFET until the fault condition is eliminated. |
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