STTH2R02AY datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

200

IF(RMS)

Forward rms current

IF(AV)

Average forward current δ = 0.5, square wave

TL = 119 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature

+175

°C

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

°C/W

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Reverse leakage current

Tj = 25 °C

VR = VRRM

2.5

µA

Tj = 125 °C

2.5

Forward voltage drop

Tj = 25 °C

IF = 2 A

0.90

1.04

Tj = 150 °C

0.71

0.82

Tj = 25 °C

IF = 6 A

1.25

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.64 x IF(AV) + 0.09 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

Table 4. Dynamic characteristics (Tj = 25 °C unless otherwise specified)

Symbol

Parameters

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/μs, VR = 30 V

IF = 1 A, dIF/dt = -100 A/μs, VR = 30 V

IRM

Reverse recovery current

IF = 2 A, dIF/dt = -200 A/μs, VR = 160 V, Tj = 125 °C

3.5

STTH2R02AY

Characteristics

DS13660 - Rev 1

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