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STTH2R02AY 数据表(PDF) 4 Page - STMicroelectronics |
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STTH2R02AY 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Figure 7. Peak reverse recovery current versus dIF/dt (typical values) 0 1 2 3 4 5 6 7 10 1000 I RM(A) V R = 160 V T j = 125 °C I F = IF(AV) dIF/dt(A/µs) Figure 8. Relative variations of dynamic parameters versus junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 V R = 160 V I F = IF(AV) Reference: T j = 125 °C I RM Q RR Figure 9. Junction capacitance versus reverse voltage applied (typical values) 1 10 100 1 10 100 1000 C(pF) F = 1 MHz V osc= 30 mVRMS T j = 25 °C VR(V) Figure 10. Thermal resistance junction to ambient versus copper surface under each lead (typical values) 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 SCU(cm²) Epoxy printed circuit board, copper thickness = 70 µm Rth(j-a)(°C/W) SMA STTH2R02AY Characteristics (curves) DS13660 - Rev 1 page 4/9 |
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