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TSB711AIYLT 数据表(PDF) 7 Page - STMicroelectronics |
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TSB711AIYLT 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 36 page ![]() Symbol Parameter Conditions Min. Typ. Max. Unit in Input current noise density f = 1 kHz 0.15 (6) pA / √Hz 1. See Section 5.4 Input offset voltage drift over the temperature in application information. 2. Typical value is based on the VIO drift observed after 1000 h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. See Section 5.5 Long term input offset voltage drift. 3. Current is positive when it is sinked into the op-amp. 4. Iio is defined as |Iibp – Iibn| 5. For higher capacitive values see Figure 26. Phase margin vs. output current at VCC = 36 V, Figure 27. Phase margin vs. capacitive load and Figure 28. Overshoot vs. capacitive load at VCC = 36 V 6. Theoretical value of the input current noise density based on the measurement of the input transistor base current: in= 2.q.ib TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A Electrical characteristics DS12487 - Rev 6 page 7/36 |
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