5.7

Maximum power dissipation

The usable output load current drive is limited by the maximum power dissipation allowed by the device package.

The absolute maximum junction temperature for the TSB711, TSB711A, TSB712, TSB712A is 150 °C. The

junction temperature can be estimated as follows:

TJ=PD×Rtℎ−ja+TA

(10)

by the output stage transistor. It is calculated as follows:

PD= VCC×ICC + VCC+−VOUT ×ILoad

(11)

when the op-amp sources the current

PD= VCC×ICC + VOUT−VCC− ×ILoad

(12)

when the op-amp is sinks the current.

Do not exceed the 150 °C maximum junction temperature for the device. Exceeding the junction temperature limit

can cause degradation in the parametric performance or even destroy the device.

5.8

Capacitive load and stability

Stability analysis must be performed for large capacitive loads over 100 pF. Increasing the load capacitance to

high values produces gain peaking in the frequency response, with overshoot and ringing in the step response.

Generally, unity gain configuration is the worst situation for stability and the ability to drive large capacitive loads.

For additional capacitive load drive capability in unity-gain configuration, stability can be improved by inserting

maintaining DC performance for purely capacitive loads. However, if there is a resistive load in parallel with the

capacitive load, a voltage divider is created introducing a gain error on the output and slightly reducing the output

acceptable from a stability point-of-view as described in the following figure:

Unstable

S

TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A

Maximum power dissipation

DS12487 - Rev 6

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