STTH1004 datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH1004

2/7

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.05 x IF(AV) + 0.03 IF

(RMS)

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220FPAC

° C/W

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

200

(2)

Forward voltage drop

Tj = 25° C

IF = 10 A

1.5

1.7

Tj = 125° C

1.15

1.35

Pulse test: tp = 5 ms, δ < 2%

Pulse test: tp = 380 µs, δ < 2%

Table 4.

Recovery characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

Tj = 25° C

IF = 0.5 A, Irr = 0.25 A

IR = 1 A

IF = 1 A, VR = 30 V

dIF/dt = -50 A/µs

tfr

Forward recovery time

Tj = 25° C

IF = 10 A, dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

140

VFP

Peak forward voltage

Tj = 25° C

IF = 10 A , dIF/dt = 100 A/µs

IRM

Reverse recovery current

Tj = 125° C

IF = 10 A, VCC = 200 V

dIF/dt = 200 A/µs

6.2

Sfactor

Softness factor

0.3

Figure 1.

Conduction losses versus

average forward current

Figure 2.

Forward voltage drop versus

forward current

468

d=0.05

d=0.1

d=0.2

d=0.5

d=1

IF(av) (A)

P (W)

100

120

140

160

180

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

j=125°C

(Maximum values)

j=125°C

(Typical values)

j=25°C

(Maximum values)

(V)

(A)

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