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STTH1004 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH1004
功能描述  High efficiency rectifier
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH1004 数据表(HTML) 3 Page - STMicroelectronics

  STTH1004 Datasheet HTML 1Page - STMicroelectronics STTH1004 Datasheet HTML 2Page - STMicroelectronics STTH1004 Datasheet HTML 3Page - STMicroelectronics STTH1004 Datasheet HTML 4Page - STMicroelectronics STTH1004 Datasheet HTML 5Page - STMicroelectronics STTH1004 Datasheet HTML 6Page - STMicroelectronics STTH1004 Datasheet HTML 7Page - STMicroelectronics  
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STTH1004
Characteristics
3/7
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
th(j-c)/Rth(j-c)
Single pulse
TO-220FPAC
tP(s)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0
50
100
150
200
250
300
350
400
450
500
I
F=IF(AV)
V
R=200V
T
j=125°C
I
(A)
RM
dI /dt(A/µs)
F
Figure 5.
Reverse recovery time versus
dIF/dt (typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
0
10
20
30
40
50
60
70
80
0
50
100
150
200
250
300
350
400
450
500
I
F=IF(AV)
V
R=200V
T
j=125°C
t (ns)
rr
dI /dt(A/µs)
F
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
400
450
500
Q
RR(nC)
I
F=IF(AV)
V
R=200V
Tj=125°C
dI /dt(A/µs)
F
Figure 7.
Reverse recovery softness factor
versus dIF/dt (typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
50
100
150
200
250
300
350
400
450
500
I
F < 2 x IF(AV)
V
R=200V
T
j=125°C
S factor
dI /dt(A/µs)
F
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
25
50
75
100
125
T (°C)
j



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