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March 2004

STD55NH2LL

N-CHANNEL 24V - 0.010

Ω - 40A DPAK/IPAK

ULTRA LOW GATE CHARGE STripFET™ POWER MOSFET

■

Ω @ 10 V

■

Ω @ 4.5 V

■

■

CONDUCTION LOSSES REDUCED

■

SWITCHING LOSSES REDUCED

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LOW THRESHOLD DEVICE

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1")

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SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

The STD55NH2LL is based on the latest generation of

ST's proprietary STripFET™ technology. An innovative

layout enables the device to also exhibit extremely low

gate charge for the most demanding requirements as

high-side switch in high-frequency DC-DC converters. It's

therefore ideal for high-density converters in Telecom

and Computer applications.

APPLICATIONS

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SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

TYPE

STD55NH2LL

24 V

< 0.011

Ω

40 A(*)

3

2

1

1

3

IPAK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

Ordering Information

ABSOLUTE MAXIMUM RATINGS

SALES TYPE

MARKING

PACKAGE

PACKAGING

STD55NH2LLT4

STD55NH2LL-1

D55NH2LL

D55NH2LL

TO-252

TO-251

TAPE & REEL

TUBE

Symbol

Parameter

Value

Unit

Drain-source Voltage Rating

30

V

24

V

Ω)

24

V

Gate- source Voltage

± 18

V

40

A

28

A

Drain Current (pulsed)

160

A

60

W

Derating Factor

0.4

W/°C

Single Pulse Avalanche Energy

600

mJ

Storage Temperature

-55 to 175

°C

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM