STD55NH2LL datasheet(3/12 Pages) STMICROELECTRONICS

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STD55NH2LL

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(1) Garanted when external Rg=4.7

Ω and tf < tfmax.

(4) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area

(5) Qoss = Coss*

∆ Vin , Coss = Cgd + Cds . See Appendix A

(3) Starting Tj = 25 oC, ID = 20A, VDD = 15V

(*) Value limited by wire bonding

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 10 V

ID = 20 A

RG =4.7

Ω

VGS = 4.5 V

(Resistive Load, Figure 3)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

0.44V ≤ VDD ≤ 10V,

ID= 40 A

VGS= 4.5 V

8.7

4.2

2.4

Qoss(5)

Output Charge

VDS= 16 V

VGS= 0 V

7.6

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

VDD = 10 V

ID = 20 A

RG =4.7

Ω,

VGS = 10 V

(Resistive Load, Figure 3)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain Current

Source-drain Current (pulsed)

160

VSD (4)

Forward On Voltage

ISD = 20 A

VGS = 0

1.3

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 40 A

di/dt = 100A/µs

VDD = 15 V

Tj = 150°C

(see test circuit, Figure 5)

32.5

1.7

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

Thermal Impedance

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