CBA

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Vishay Electro-Films

Revision: 02-May-13

1

Document Number: 61041

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Thin Film Binary MOS Capacitors

Product may not be to scale

The CBA MOS capacitor chips each contain four different

capacitors in binary increments allowing the user many

choices in value selection. Two versions of CBA capacitors

are available: one with a total capacitance of 3.75 pF and

one with a total capacitance of 15 pF.

These chips are manufactured using Vishay Electro-Films

(EFI) sophisticated Thin Film equipment and manufacturing

technology. The CBAs are 100 % electrically tested and

visually inspected to MIL-STD-883.

FEATURES

• Wire bondable

• User value selection

• Four capacitors with common connection

• Capacitance range: 0.25 pF to 15 pF in binary

increments

• Dielectric: Silicon dioxide

• Chip size: 0.019" x 0.030"

• Substrate: Silicon with gold backing

• Material categorization: For definitions of compliance

APPLICATIONS

Vishay EFI CBA binary MOS multi-value capacitor chips are

designed for hybrid packages in which microwave circuits

are to be trimmed. This is done on the CBA chips by

selecting the bonding pad for the required capacitance and

wire-bonding by conventional techniques.

WV (DC) VALUES AND TOLERANCES

CAPACITOR MODEL

CBA 3.75 pF

CBA 15 pF

UNIT

Case Size

0203

0203

Total Capacitance

3.75

15

pF

Capacitance Values

0.25, 0.50, 1.0, 2.0

1.0, 2.0, 4.0, 8.0

pF

Tolerance

± 25

± 10

%

DC Working Voltage

100

30

V

STANDARD ELECTRICAL SPECIFICATIONS

PARAMETER

VALUE

UNIT

Capacitance Range

0.25 to 15

pF

Maximum Working Voltage

100

V

Peak Voltage at + 25 °C

1.5 x working voltage

0.1 max. MOS

%

1000 min.

TCC, - 55 °C to + 150 °C

+ 15 ± 25

ppm/°C

Insulation Resistance at Working Voltage, + 25 °C



Operating Temperature Range

- 55 to + 150

°C

Thermal Shock

± 0.25 + 0.25 pF max.

C/C

%

Moisture Resistance, MIL-STD-202, Method 106

± 1.0 + 0.25 pF max.

C/C

%

Short Time Overload, + 25 °C, 5 s; 1.5 x Working Voltage

± 0.25 + 0.25 pF max.

C/C

%

High Temperature Exposure: 100 h at + 150 °C Ambient

± 0.25 + 0.25 pF max.

%

Life, MIL-STD-202, Method 108,



Condition D, + 125 °C Ambient, 1000 h at Working Voltage

± 2.0 + 0.25 pF max.

C/C

%