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NAND01GR3B 数据表(PDF) 19 Page - STMicroelectronics |
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NAND01GR3B 数据表(HTML) 19 Page - STMicroelectronics |
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19 / 64 page ![]() NAND01G-B, NAND02G-B Bus operations 19/64 3.12 VSS Ground Ground, VSS, is the reference for the power supply. It must be connected to the system ground. 4 Bus operations There are six standard bus operations that control the memory. Each of these is described in this section, see Table 5: Bus Operations, for a summary. Typically, glitches of less than 5 ns on Chip Enable, Write Enable and Read Enable are ignored by the memory and do not affect bus operations. 4.1 Command Input Command Input bus operations are used to give commands to the memory. Commands are accepted when Chip Enable is Low, Command Latch Enable is High, Address Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input commands. See Figure 23 and Table 24 for details of the timings requirements. 4.2 Address Input Address Input bus operations are used to input the memory addresses. Four bus cycles are required to input the addresses for 1Gb devices whereas five bus cycles are required for the 2Gb device (refer to Table 6 and Table 7, Address Insertion). The addresses are accepted when Chip Enable is Low, Address Latch Enable is High, Command Latch Enable is Low and Read Enable is High. They are latched on the rising edge of the Write Enable signal. Only I/O0 to I/O7 are used to input addresses. See Figure 24 and Table 24 for details of the timings requirements. 4.3 Data Input Data Input bus operations are used to input the data to be programmed. Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the Write Enable signal. The data is input sequentially using the Write Enable signal. See Figure 25 and Table 24 and Table 25 for details of the timings requirements. |
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