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NAND01GR3B 数据表(PDF) 49 Page - STMicroelectronics

部件名 NAND01GR3B
功能描述  1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PDF  64 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

NAND01GR3B 数据表(HTML) 49 Page - STMicroelectronics

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NAND01G-B, NAND02G-B
DC And AC parameters
49/64
Table 24.
AC Characteristics for Command, Address, Data Input
Symbol
Alt.
Symbol
Parameter
1.8V
Devices
3V
Devices
Unit
tALLWL
tALS
Address Latch Low to Write Enable Low
AL Setup time
Min
0
0
ns
tALHWL
Address Latch High to Write Enable Low
tCLHWL
tCLS
Command Latch High to Write Enable
Low
CL Setup time
Min
0
0
ns
tCLLWL
Command Latch Low to Write Enable Low
tDVWH
tDS
Data Valid to Write Enable High
Data Setup time
Min
20
20
ns
tELWL
tCS
Chip Enable Low to Write Enable Low
E Setup time
Min
0
0
ns
tWHALH
tALH
Write Enable High to Address Latch High
AL Hold time
Min
10
10
ns
tWHCLH
tCLH
Write Enable High to Command Latch
High
CL hold time
Min
10
10
ns
tWHCLL
Write Enable High to Command Latch
Low
tWHDX
tDH
Write Enable High to Data Transition
Data Hold time
Min
10
10
ns
tWHEH
tCH
Write Enable High to Chip Enable High
E Hold time
Min
10
10
ns
tWHWL
tWH
Write Enable High to Write Enable Low
W High Hold
time
Min
20
20
ns
tWLWH
(1)
tWP
Write Enable Low to Write Enable High
W Pulse Width
Min
25
25
ns
tWLWL
tWC
Write Enable Low to Write Enable Low
Write Cycle time
Min
60
50
ns
1.
If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns.



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