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MIC2104 数据表(PDF) 25 Page - Microchip Technology |
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MIC2104 数据表(HTML) 25 Page - Microchip Technology |
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25 / 42 page ![]() 2017 Microchip Technology Inc. DS20005899A-page 25 MIC2103/4 the gate voltage with minimal droop for the power stroke (high-side switching) cycle, i.e., ∆BST = 10 mA x 3.33 μs/0.1 μF = 333 mV. When the low-side MOSFET is turned back on, CBST is recharged through D1. A small resistor RG, which is in series with CBST, can be used to slow down the turn-on time of the high-side N-channel MOSFET. The drive voltage is derived from the VDD supply voltage. The nominal low-side gate drive voltage is VDD and the nominal high-side gate drive voltage is approximately VDD – VDIODE, where VDIODE is the voltage drop across D1. An approximate 30 ns delay between the high-side and low-side driver transitions is used to prevent current from simultaneously flowing unimpeded through both MOSFETs. |
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