BUH313 datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

2.8

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

T est Con ditio ns

Min .

T yp.

Max.

Uni t

ICES

Collector Cut -off

Current (VBE =0)

VCE = 1300 V

Tj = 125

IEBO

Emitter Cut- off Current

(IC =0)

VEB = 5 V

100

µA

VCEO(s us)

Collector-Emitt er

Sustaining Voltage

IC =100 mA

600

VEBO

Emitter-Base Voltage

(IC =0)

IE =10 mA

VCE(sat)

∗ Collector-Emitter

Sat uration Voltage

IC =3 A

IB =0.75 A

1.5

VBE(sat)

∗ Base-Emitter

Sat uration Voltage

IC =3 A

IB =0.75 A

1.3

hFE

∗

DC Current Gain

IC =3 A

VCE =5 V

IC =3 A

VCE =5 V

Tj =100

5.5

3.5

RESISTIVE LOAD

Storage Time

Fall Time

VCC =400 V

IC =3 A

IB1 = 0.75 A

IB2 =1.5 A

1. 6

110

2.4

200

µs

INDUCT IVE LOAD

Storage Time

Fall Time

IC = 3 A

f = 15625 Hz

IB1 = 0.75 A

IB2 =-1.5 A

Vcefly back =1050 sin







6





3. 5

340

µs

INDUCT IVE LOAD

Storage Time

Fall Time

IC = 3 A

f = 31250 Hz

IB1 = 0.75 A

IB2 =-1.5 A

Vcefly back =1200 sin













3. 5

270

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

BUH313

2/7

BUH313 数据表(PDF) 2 Page - STMicroelectronics

BUH313 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

数据表下载

链接网址

BUH313 数据表(PDF) 2 Page - STMicroelectronics

BUH313 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7

数据表 下载

链接网址

数据表下载