PIMXRT516SCVP2A datasheet(24/128 Pages) NXP

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i.MX RT1170 Crossover Processors Data Sheet for Consumer Products, Rev. 1, 05/2021

NXP Semiconductors

Electrical characteristics

This section provides the device and module-level electrical characteristics for the i.MX RT1170

processors.

4.1

Chip-level conditions

This section provides the device-level electrical characteristics for the IC. See Table 7 for a quick reference

to the individual tables and sections.

4.1.1

Absolute maximum ratings

CAUTION

Stress beyond those listed under Table 8 may cause permanent damage to the device. These are stress

ratings only. Functional operation of the device at these or any other conditions beyond those indicated

under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated

conditions for extended periods may affect device reliability.

Table 8 shows the absolute maximum operating ratings.

Table 7. i.MX RT1170 chip-Level conditions

For these characteristics

Topic appears

Absolute maximum ratings

on page 24

Thermal characteristics

on page 26

Operating ranges

on page 26

Maximum supply currents

on page 29

Typical power mode supply currents

on page 30

System power and clocks

on page 36

Table 8. Absolute maximum ratings

Parameter Description

Symbol

Min

Max

Unit

Core supplies input voltage

VDD_SOC_IN

-0.3

1.2

Power for LPSR domain

VDD_LPSR_IN

-0.3

3.96

Power for DCDC

DCDC_IN

-0.3

3.96

Power for PLL, OSC, and LDOs

VDDA_1P8_IN

-0.3

1.98

Supply input voltage to Secure Non-Volatile Storage

and Real Time Clock

VDD_SNVS_IN

-0.3

3.96

USB VBUS supply

USB1_VBUS

USB2_VBUS

-0.3

5.6

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