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HMC619LP5 数据表(PDF) 4 Page - Analog Devices |
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HMC619LP5 数据表(HTML) 4 Page - Analog Devices |
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4 / 22 page ![]() For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 2 HMC980 v00.0312 Active BiAs controller High current electrical specifications, t A = +25°c, vDD=12v, vDiG= 3.3v, Depletion Master Unless Otherwise Noted parameter symbol Conditions Min. typ. Max. Units supply Voltage Vdd 5 16.5 V VDD Quiescent Current iDD VDD = 5V en = VDiG 19 ma en = GnD 7.5 ma VDD = 12V en = VDiG 20 ma en = GnD 9 ma VDiG Quiescent Current iDiG VDiG= 3.3 V 3.5 ma VDiG= 5 V 6.5 ma Charge pump oscillator Frequency FosC 300 khz Voltage reference VreF 1.44 V alMtriG input threshold alMtriG Vinlow 1 V Vinhigh 1.4 V enable input threshold enthrs Vinlow 1 V Vinhigh 1.4 V s0, s1 input threshold sWthrs Vinlow 1 V Vinhigh 1.4 V VDRAIN Characteristics Drain Current adjustment range iDrain s1=s0=GnD 0.05 0.3 a s1=GnD, s0=VDiG 0.3 0.6 a s1=VDiG, s0=GnD 0.6 1.2 a s1=VDiG, s0=VDiG 1.2 1.6 a Drain Current Change over Digital Voltage ΔiDrainV VDrain set to 12V, iDrain set to 400 ma 0.4 %/V Drain Current Change over temperature 0.023 %/C Drain range VDrain 5 16.5 V VDrain Change over temperature ΔVDrain VDrain set to 12V, iDrain set to 400 ma 0.02 %/C VNEG Characteristics negative Voltage output VneG -2.46 V VneG Current sink ineG 0 60 ma VGATE Characteristics Gate Current supply iG -4 4 ma VGate low level VG_Min VneG V VGate high level VG_MaX VneG+4.5 V VG2 Characteristics VG2 Current supply iG2 VG2<2V -0.1 0.1 ma 6V>VG2>2V -1 1 ma VG2>6V -5 5 ma VG2 adjustment range VG2 1 VDD-1.3 V VDIG Characteristics adjustment range VDiG 3.3 5 V VDiG Quiescent Current iDiG VDD= 12V, VDiG=en =3.3 V 3.5 ma SW Characteristics internal switch resistance rDs_on s1=s0=GnD 2.8 ohm s1=GnD, s0=VDiG 1.55 ohm s1=VDiG, s0=GnD 0.85 ohm s1=VDiG, s0=VDiG 0.7 ohm |
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