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AT25QL321-DWF 数据表(PDF) 2 Page - Dialog Semiconductor |
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AT25QL321-DWF 数据表(HTML) 2 Page - Dialog Semiconductor |
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2 / 79 page ![]() DS-25QL321–131C–5/2017 Features Single 1.7V - 2.0V Supply Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI) Compatible Supports SPI Modes 0 and 3 Supports Dual Output Read and Quad I/O Program and Read Supports QPI Program and Read 104 MHz* Maximum Operating Frequency Clock-to-Output (tV1) of 6 ns Up tp 65MB/S continuous data transfer rate Quad Enabled (factory default setting: see Section 6.4) Full Chip Erase Flexible, Optimized Erase Architecture for Code and Data Storage Applications 0.6 ms Typical Page Program (256 Bytes) Time 60 ms Typical 4-Kbyte Block Erase Time 200 ms Typical 32-Kbyte Block Erase Time 300 ms Typical 64-Kbyte Block Erase Time Hardware Controlled Locking of Protected Blocks via WP Pin 4K-bit secured One-Time Programmable Security Register Hardware Write Protection Serial Flash Discoverable Parameters (SFDP) Register Flexible Programming Byte/Page Program (1 to 256 Bytes) Dual or Quad Input Byte/Page Program (1 to 256 Bytes) Accelerated programming mode via 9V ACC pin Erase/Program Suspend and Resume JEDEC Standard Manufacturer and Device ID Read Methodology Low Power Dissipation 2µA Deep Power-Down Current (Typical) 10µA Standby current (Typical) 5mA Active Read Current (Typical) Endurance: 100,000 program/erase cycles (4KB, 32KB or 64KB blocks) Data Retention: 20 Years Industrial Temperature Range: -40°C to +85°C Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options 8-lead SOIC (208-mil) 8-pad DFN (6 x 5 x 0.6 mm) 24-ball Ball Grid Array (BGA) 8 and 10-ball WLCSP, die Ball Grid Array (dBGA) 8-pad USON(3 x 4 x 0.55mm) Die in Wafer Form AT25QL321 32-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support |
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