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October 2005

SMA661AS

GPS HIGH GAIN LNA ICs

Rev. 2

GENERAL FEATURES

■

LOW NOISE FIGURE 1.4 dB @ 1.575 GHz

■

HIGH GAIN 17 dB @ 1.575 GHz

■

POWER DOWN FUNCTION

■

TEMPERATURE COMPENSATED

■

UNCONDITIONALLY STABLE

■

INTEGRATED OUTPUT MATCHING

■

ESD PROTECTION (

± 2kV HBM)

■

70 GHz Silicon Germanium TECHNOLOGY

■

LEAD-FREE STRAIGHT PACKAGE (SOT666)

APPLICATIONS

■

GPS

DESCRIPTION

SMA661AS is a product of the

SMA

Family

(Silicon MMIC Amplifiers), it uses ST state-of-the

art SiGe BiCMOS technology.

The excellent RF performances (17dB Gain and

1.4dB NF at 1.575GHz) and the few external

component counts (just one capacitor) make the

SMA661AS an ideal solution for GPS Low Noise

Amplifier. SMA661AS embeds a power down

function avoiding to use an external switch; in

sumption is about 10 nA. It is housed in ultra min-

iature SOT666 plastic

package

(1.65mm x

1.2mm x 1.57mm).

Figure 1. Package

Table 1. Pin Connection

Table 2. Order Codes

Figure 2. Circuit Schematic

Pin No.

Pin Name

1RF IN

2GND

3PD

4RF OUT

5GND

6Vcc

Top View

34

1

2

5

6

SOT666 (Lead-Free)

1.65 x 1.2 x 0.57 mm

Package

Tape and Reel

SOT666

SMA661ASTR

SMA661AS

RF input

RF IN (1)

VCC (6)

GND (2,5)

RF Output

C1

RF OUT(4)

PD (3)

33nF

PRELIMINARY DATA