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SMA661AS 数据表(PDF) 2 Page - STMicroelectronics |
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SMA661AS 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() SMA661AS 2/10 Table 3. Absolute Maximum Ratings ELECTRICAL CHARACTERISTICS (Ta = +25 oC, Vcc = 2.7 V, ZL = ZS = 50 ohm, unless otherwise specified; measured according to Figure 13) Table 4. Electrical Characteristics Note: (1) The device is switched to OFF state (2) The device is switched to ON state Symbol Parameter Conditions Value Unit Vcc Supply voltage 3.3 V Tstg Storage temperature -60 to +150 oC Ta Operating ambient temperature -40 to +85 oC VESD Electrostatic Discharge HBM (ALL PINs) ± 2000 V VESD Electrostatic Discharge MM (ALL PINs) ± 200 V Symbol Parameters Test Conditions Min. Typ. Max. Unit f Frequency 1575 MHz Vcc Supply voltage 2.53 2.7 2.87 V Icc Current Consumption 8.5 mA IPD Power Down Mode Current Consumption VPD ≤ VPDL 10 nA Gp Power gain 17 dB NF Noise figure 1.4 dB IIP2 Input IP2 f1 = 849 MHz, f2 = 2424 MHz, Pin = -30 dBm 0.5 dBm IIP3 Input IP3 f1 = 1574.5 MHz, f2 = 1575.5 MHz, Pin = -30 dBm 3dBm ISL Reverse Isolation -28 dB RLin Input Return Loss f = 1500-1650 MHz 10 dB RLout Output Return Loss f = 1500-1650 MHz 10 dB VPDL (1) Power Down Low State 0.5 V VPDH (2) Power Down High State 1.0 V Stability 100 - 10000 MHz Unconditionally stable |
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