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MWPR1024IZVHT 数据表(PDF) 8 Page - NXP Semiconductors |
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MWPR1024IZVHT 数据表(HTML) 8 Page - NXP Semiconductors |
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8 / 86 page ![]() • Flash implemented as two equal blocks each of 256 KB block. Code can execute or read from one block while the other block is being erased or programmed. • Firmware distribution protection. Program flash can be marked execute-only on a per-sector (8 KB) basis to prevent firmware contents from being read by third parties. • 128 KB SRAM • Security circuitry to prevent unauthorized access to RAM and flash contents through the debugger 3.4 System features Power Management Control Unit (PMC) • Programmable power saving modes • Available wake-up from power saving modes via internal and external sources • Integrated Power-on Reset (POR) • Integrated Low Voltage Detect (LVD) with reset (brownout) capability • Selectable LVD trip points • Programmable Low Voltage Warning (LVW) interrupt capability • Individual peripheral clocks can be gated off to reduce current consumption • Internal Buffered bandgap reference voltage • Factory programmed trim for bandgap and LVD • 1 kHz Low Power Oscillator (LPO) DC-DC Converters • Internal switched mode power supply supporting Buck, Boost, and Bypass operating modes • Buck operation supports external voltage sources of 2.1 V to 4.2 V. This reduces peak current consumption during Rx and Tx by ~25%, ideal for single coin-cell battery operation (typical CR2032 cell). • Boost operation supports external voltage sources of 0.9 V to 1.795 V, which is efficiently increased to the static internal core voltage level, ideal for single battery operation (typical AA or AAA alkaline cell). • When DC-DC is not used, the device supports an external voltage range of 1.5 V to 3.6 V (1.5 - 3.6 V on VDD_RF1, VDD_RF2, VDD_XTAL and VDD_1P5OUT_PMCIN pins. 1.71 - 3.6 V on VDD_0, VDD_1 and VDDA pins) Feature Descriptions 8 MWPR1124ZVHT/MWPR1024IZVHT Data Sheet, Rev. 0, 04/2018 NXP Semiconductors |
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