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DS20005677B-page 3

MIC5021

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage, VDD..................................................................................................................................................+40V

Input Voltage, VIN....................................................................................................................................... –0.5V to +15V

Sense Differential Voltage........................................................................................................................................±6.5V

SENSE+ or SENSE– to GND .................................................................................................................... –0.5V to +36V

Timer Voltage ...........................................................................................................................................................+5.5V

VBOOST Capacitor ................................................................................................................................................ 0.01 µF

Operating Ratings

Supply Voltage, VDD.................................................................................................................................... +12V to +36V

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated

in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,

Gate CL = 1500 pF (IRF540 MOSFET).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

DC Supply Current

—

1.8

VDD = 12V, Input = 0V

—

2.5

VDD = 36V, Input = 0V

—

1.7

VDD = 12V, Input = 5V

—

2.5

VDD = 36V, Input = 5V

Input Threshold

—

0.8

1.4

2.0

—

Input Hysteresis

—

0.1

—

Input Pull-Down Current

—

µA

Input = 5V

Current-Limit Threshold

—

Note 1

Gate On Voltage

—

VDD = 12V (Note 2)

—

VDD = 36V (Note 2)

Gate On-Time (Fixed)

tG(ON)

µs

Sense Differential  70 mV

(Note 8)

Gate Off-Time (Adjustable)

tG(OFF)

µs

Sense Differential  70 mV,

CT = 0 pF (Note 8)

Gate Turn-On Delay

tDLH

—

500

1000

Note 3

Gate Rise Time

—

400

500

Note 4

Gate Turn-Off Delay

tDLH

—

800

1500

Note 5

Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense

MOSFET’s current transfer ratio.

2: DC measurement.

3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.

4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.

5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)

to 17V.

6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.

7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle.

8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.

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