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MIC5021 数据表(PDF) 13 Page - Microchip Technology

部件名 MIC5021
功能描述  High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit
PDF  24 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MIC5021 数据表(HTML) 13 Page - Microchip Technology

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DS20005677B-page 13
MIC5021
FIGURE 6-6:
Solenoid Driver with Current
Sensing.
6.9.1
LIMITING INDUCTIVE SPIKES
The voltage across the inductor can be limited by con-
necting a Schottky diode across the load. The diode is
forward biased only when the load is switched off. The
Schottky diode clamps negative transients to a few
volts. This protects the MOSFET from drain-to-source
breakdown and prevents the transient from damaging
the charge pump by way of the boost capacitor (see
Sense Pin Considerations).
The diode should have a peak forward current rating
greater than the load current. This is because the cur-
rent through the diode is the same as the load current
at the instant the MOSFET is turned off.
6.9.2
SENSE PIN CONSIDERATIONS
The sense pins of the MIC5021 are sensitive to nega-
tive voltages. Forcing the sense pins much below
–0.5V effectively reverses the supply voltage on por-
tions of the driver resulting in unpredictable operation
or damage.
Figure 6-7 shows current flowing out of the sense leads
of an MIC5021 during a negative transient (inductive
kick). Internal Schottky diodes attempt to limit the neg-
ative transient by maintaining a low forward drop.
FIGURE 6-7:
Inductive Load Turn-Off.
Although the internal Schottky diodes can protect the
driver in low-current resistive applications, they are
inadequate for inductive loads or the lead inductance in
high-current resistive loads. Because of their small
size, the diodes’ forward voltage drop quickly exceeds
0.5V as current increases.
6.9.3
EXTERNAL PROTECTION
Resistors placed in series with each SENSE connec-
tion limit the current drawn from the internal Schottky
diodes during a negative transient. This minimizes the
forward drop across the diodes.
During normal operation, sensing current from the
sense pins is unequal (5 µA and 15 µA). The internal
Schottky diodes are reverse-biased and have no effect.
To avoid skewing the trip voltage, the current limiting
resistors must drop equal voltages at the trip point cur-
rents (see Figure 6-8). To minimize resistor tolerance
error, use a voltage drop lower than the trip voltage of
50 mV. 5 mV is suggested.
FIGURE 6-8:
Resistor Voltage Drop.
VDD
INPUT
C
T
GND
V BOOST
GATE
SENSE-
SENSE+
TTL INPUT
RSENSE
N-CHANNEL
POWER MOSFET
(IRF540)
+20V TO +36V
MIC5021
1
2
3
4
8
7
6
5
10μF
SOLENOID
(24V, 47Ω)
0.01
μF
SCHOTTKY
DIODE
(1N5822)
(+24V)
(<0.08Ω)
MOSFET
TURN-OFF
0V
NEGATIVE
SPIKE
~VDD
VDD
INPUT
CT
GATE
MIC5021
1
2
3
4
8
7
6
5
INDUCTIVE
LOAD
FORWARD DROP ACROSS DIODES
ALLOWS LEADS TO GO NEGATIVE
CURRENT FLOWS FROM GROUND (0V)
THROUGH THE DIODES TO THE LOAD
DURING NEGATIVE TRANSCIENTS.
V DD
INPUT
C T
GND
V BOOST
GATE
SENSE-
SENSE+
N-CHANNEL
POWER MOSFET
MIC5021
1
2
3
4
8
7
6
5
RS
LOAD
5μA
15μA
VR2
R1
R2
VR1 =VR2
TO AVOID SKEWING
THE 50mV TRIP POINT.
(5mV SUGGESTED)
R1 3 × R2
VR1
50mV NOMINAL
(@ TRIP)
=~



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