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AS3418 数据表(PDF) 39 Page - ams AG

部件名 AS3418
功能描述  Low Noise ANC Solution
PDF  77 Pages
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制造商  AMSCO [ams AG]
网页  http://www.ams.com
标志 AMSCO - ams AG

AS3418 数据表(HTML) 39 Page - ams AG

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AS3418
Functional Description
Datasheet
• PUBLIC
DS000507
• v4-00 • 2020-Jan-23
77
│ 39
6.9.1
Parameter
VBAT =1.8V, TA= 25ºC, unless otherwise specified.
Figure 51:
VNEG Charge Pump Parameter
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIN
Input Voltage
VBAT
1.4
1.6
1.8
V
VOUT
Output Voltage
VNEG
-1.8
-1
V
CVBAT
VBAT input
capacitor
Effective capacitive value
1.6
4.7
5.46
µF
CVNEG
VNEG output
capacitor
Effective capacitive value
3.4
10
12
µF
CFLY
Flying capacitor
Effective capacitive value
0.97
2.2
2.86
µF
6.10
EEPROM
The AS3418 features an integrated EEPROM that stores the system configuration data like
microphone gain settings and configuration of the different operation modes during power down
operation mode. Because the EEPROM is not bit addressable the AS3418 has an additional register
bank in parallel to the EEPROM that is loaded with the EEPROM content during startup of the device.
Each time AS3418 is powered up the EEPROM content is loaded to the register bank (0x00
– 0x1D)
to configure the AS3418 according to the application requirements. The registers can be accessed via
the I2C interface for embedded applications and system evaluation purpose. For non-embedded
systems were no MCU is in place to configure the device there are two dedicated production trimming
signal lines available that allow access to the AS3418 registers and upload/download function of the
EEPROM.
Figure 52:
Register Access
AS3418 Register
0x00 – 0x1D
EEPROM
Memory
WRITE
READ
WRITE
READ
MODE/CSCL
ANC/CSDA
TRSDA
TRSCL



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