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ADP7185ACPZN-R7 数据表(PDF) 16 Page - Analog Devices |
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ADP7185ACPZN-R7 数据表(HTML) 16 Page - Analog Devices |
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16 / 19 page ![]() ADP7185 Data Sheet Rev. 0 | Page 16 of 19 Figure 48 shows the change in capacitance vs. the dc bias voltage characteristics of a 0805 case, 4.7 μF, 10 V, X5R capacitor. The capacitor size and voltage ratings strongly influence the voltage stability of a capacitor. In general, a capacitor in a larger package or with a higher voltage rating exhibits improved stability. The temperature variation of the X5R dielectric is about ±15% over the −55°C to +85°C temperature range and is not a function of package size or voltage rating. 0 024 68 10 12 DC BIAS VOLTAGE (V dc) 5.64 4.70 1.88 2.82 3.76 0.94 Figure 48. Change in Capacitance vs. DC Bias Voltage Use Equation 4 to determine the worst-case capacitance, accounting for capacitor variation over temperature, component tolerance, and voltage. CEFF = COUT × (1 − TEMPCO) × (1 − TOL) (4) where: CEFF is the effective capacitance at the operating voltage. COUT is the output capacitor. TEMPCO is the worst-case capacitor temperature coefficient. TOL is the worst-case component tolerance. In this example, the worst-case temperature coefficient (TEMPCO) over −55°C to +85°C is assumed to be 15% for an X5R dielectric. The tolerance of the capacitor (TOL) is assumed to be 10%, and COUT = 4.7 μF at 1.0 V. Substituting these values in Equation 4 yields CEFF = 4.7 μF × (1 − 0.15) × (1 − 0.1) = 3.6 μF Therefore, the capacitor chosen in this example meets the minimum capacitance requirement of the LDO over temperature and tolerance at the chosen output voltage. To guarantee the performance of the ADP7185, it is imperative to evaluate the effects of dc bias, temperature, and tolerances on the behavior of the capacitors for each application. UNDERVOLTAGE LOCKOUT (UVLO) The UVLO circuitry protects the system from power supply brownouts. If the input voltage on VIN is more positive than the minimum −1.58 V UVLO falling threshold, the LDO output shuts down. The LDO enables again when the voltage to VIN is more negative than the maximum −1.77 V UVLO rising threshold. A typical hysteresis of 90 mV within the UVLO circuitry prevents the device from oscillating due to the noises from VIN. 0.05 0 –0.55 –1.60 VIN (V) –1.74 –1.72 –1.70 –1.68 –1.66 –1.64 –1.62 –0.50 –0.45 –0.40 –0.35 –0.30 –0.25 –0.20 –0.15 –0.10 –0.05 Figure 49. Typical UVLO Behavior, VOUT = −0.5 V CURRENT-LIMIT AND THERMAL OVERLOAD PROTECTION The ADP7185 is protected against damage due to excessive power dissipation by current-limit and thermal overload protection circuits. The ADP7185 is designed to reach current limit when the output load reaches −900 mA (typical). When the output load exceeds −900 mA, the output voltage is reduced to maintain a constant current limit. Thermal overload protection is included, which limits the junction temperature to a maximum of 150°C (typical). Under extreme conditions (that is, high ambient temperature and power dissipation) when the junction temperature begins to rise above 150°C, the output is turned off, reducing the output current to zero. When the junction temperature drops below 135°C (typical), the output is turned on again, and the output current is restored to its nominal value. Consider the case where a hard short from VOUT to GND occurs. At first, the ADP7185 reaches current limit so that only −900 mA is conducted into the short. If self-heating of the junction becomes great enough to cause its temperature to rise above 150°C, thermal shutdown activates, turning off the output and reducing the output current to zero. As the junction temperature cools and drops below 135°C, the output turns on and conducts −900 mA into the short, again causing the junction temperature to rise above 150°C. This thermal oscillation between 135°C and 150°C causes a current oscillation between −900 mA and 0 A that continues as long as the short remains at the output. Current- limit and thermal overload protections protect the device against accidental overload conditions. For reliable operation, externally limit device power dissipation so that junction temperatures do not exceed 125°C. |
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