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SY75604A 数据表(PDF) 3 Page - Microchip Technology |
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SY75604A 数据表(HTML) 3 Page - Microchip Technology |
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3 / 26 page ![]() 2021 Microchip Technology Inc. and its subsidiaries DS20006508B-page 3 SY75602A/02B/603A/03B/604A/04B 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage (VDD).................................................................................................................................–0.5V to +4.6V Input Voltage (VIN) ............................................................................................................................. –0.5V to VDD +0.5V Input ESD Protection (HBM)...................................................................................................................................... 2 kV Operating Ratings ‡ 1.8V Operating Voltage (VDD)...............................................................................................................+1.62V to +1.98V 2.5V Operating Voltage (VDD)...............................................................................................................+2.25V to +2.75V 3.3V Operating Voltage (VDD)...............................................................................................................+2.97V to +3.63V † Notice: Permanent device damage may occur if absolute maximum ratings are exceeded. This is a stress rating only and functional operation is not implied at conditions other than those detailed in the operational sections of this data sheet. Exposure to absolute maximum ratings conditions may affect device reliability. ‡ Notice: The data sheet limits are not ensured if the device is operated beyond the recommended operating conditions. ELECTRICAL CHARACTERISTICS Electrical Characteristics: VDD = 3.3V ±10%, 2.5V±10%; 1.8V±10%; TA = –40°C to +105°C, unless noted. Parameter Symbol Min. Typ. Max. Units Conditions Current Consumption Core Device Current IDD — 9 13 mA SY75602, Output current excluded (no load) — 9 13 SY75603/04, all outputs disabled Current dissipation per each LP-HCSL output IOUT_HCSL — 3.5 3.9 mA Note 1 Power Supply Noise Rejection Ratio Characteristics Power Supply Noise Rejection Ratio PSNRRHSCL — 70 — dB 100 mVPP, 100 kHz noise injected to VDD. Clock Frequency 100 MHz, VDD = 3.3V Input Characteristics Input Slew Rate SRIN 0.6 — — V/ns — Differential Input High Voltage VIH 0.15 — — V — Differential Input Low Voltage VIL — — –0.15 V — Input Voltage Swing VSWING 0.15 — — VDIFF — Absolute Crossing Point Voltage VCROSS 0.25 — 0.55 V — Variation of VCROSS Over All Edges VCROSS_DELTA — — 0.14 V — Voltage High for Output Enable VIH_OE 0.7* VDD — — V SY75603/4 only Voltage Low for Output Enable VIL_OE — — 0.3* VDD V SY75603/4 only Input Leakage Current IIL_IN –5 — 5 µA VIN = VIN(MAX), VIN = GND Input Capacitance CIN — — 5 pF — |
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