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STGF30M65DF2 数据表(PDF) 7 Page - STMicroelectronics

部件名 STGF30M65DF2
功能描述  Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF30M65DF2 数据表(HTML) 7 Page - STMicroelectronics

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STGF30M65DF2
Electrical characteristics
DocID027430 Rev 5
7/16
Figure 8: Collector current vs. switching frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
0
4
8
12
1
10
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC = 400V, R =10
,
V
GE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
16
20
GIPD170420151024FSR
IC
100
10
1
1
VCE(V)
(A)
10
1 µs
10 µs
1 ms
Single pulse
Tc= 25°C, TJ
≤ 175°C
VGE= 15V
100
100 µs
GIPD170420151029FSR
IC
60
40
20
0
6
7
VGE(V)
(A)
10
80
8
9
100
11
5
VCE= 5V
TJ= 25 °C
TJ= 175 °C
GIPD100420151152FSR
VF
1.5
1
0.5
0
0
IF(A)
(V)
20
TJ= 175°C
40
60
80
TJ= 25°C
TJ= -40°C
100
3
2.5
2
GIPD100420151209FSR
VGE(th)
1.1
1.0
-50
TJ(°C)
(norm)
0
50
100
150
IC= 500µA
VCE= VGE
0.7
0.8
0.9
GIPD100420151232FSR
V(BR)ces
1.1
1.05
-50
TJ(°C)
(norm)
0
50
100
150
IC= 250µA
0.9
0.95
1.0
GIPD100420151240FSR



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