STGF30M65DF2 datasheet(3/16 Pages) STMICROELECTRONICS

部件名	STGF30M65DF2

功能描述	Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package

PDF	16 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STGF30M65DF2

Electrical ratings

DocID027430 Rev 5

3/16

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

IC(1)

Continuous collector current at TC = 25 °C

IC(1)

Continuous collector current at TC = 100 °C

ICP(2)

Pulsed collector current

120

VGE

Gate-emitter voltage

±20

IF(1)

Continuous forward current at TC = 25 °C

IF(1)

Continuous forward current at TC = 100 °C

IFP(2)

Pulsed forward current

120

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s, TC = 25 °C)

2.5

PTOT

Total dissipation at TC = 25 °C

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by maximum junction temperature.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

°C/W

RthJC

Thermal resistance junction-case diode

°C/W

RthJA

Thermal resistance junction-ambient

62.5

°C/W

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