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STM8AF6213 数据表(PDF) 57 Page - STMicroelectronics

部件名 STM8AF6213
功能描述  Automotive 8-bit MCU, with up to 8-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, SPI, I²C, 3 to 5.5 V
PDF  112 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM8AF6213 数据表(HTML) 57 Page - STMicroelectronics

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DS9884 Rev 9
57/112
STM8AF6213/13A/23/23A/26
Electrical characteristics
108
Figure 9. fCPUmax versus VDD
Table 28. Operating conditions at power-up/power-down
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tVDD
VDD rise time rate
-
2(1)
1. Guaranteed by design.
-
µs/V
VDD fall time rate(2)
2. Reset is always generated after a tTEMP delay. The application must ensure that VDD is still above the
minimum operating voltage (VDD min) when the tTEMP delay has elapsed.
-
2(1)
-
tTEMP
Reset release delay
VDD rising
-
-
1.7
ms
VIT+
Power-on reset
threshold(3)
3. There is inrush current into VDD present after device power on to charge CEXT capacitor. This inrush energy
depends from CEXT capacitor value. For example, a CEXT of 1μF requires Q=1 μF x 1.8V = 1.8 μC.
-
2.6(1)
2.7
2.85
V
VIT-
Brown-out reset
threshold
-
2.5
2.65
2.8(1)
VHYS(BOR)
Brown-out reset
hysteresis
--
70(1)
-mV
MSv37798V1
16
12
8
4
0
3.0
4.0
5.0
5.5
Functionality guaranteed
@TA -40 to 150 °C
Supply voltage (V)
Functionality
not
guaranteed in
this area
fCPU (MHz)
24



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