STPS3150 datasheet(2/16 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

150

IF(AV)

Average forward current, δ = 0.5, square wave

SMA Flat Notch

TL = 130 °C

SMB

TL = 130 °C

SMB Flat

TL = 150 °C

DO-201AD

TL = 140 °C

IFSM

Surge non repetitive forward current

SMA Flat Notch

tp = 10 ms sinusoidal

SMB

SMB Flat

DO-201AD

100

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

210

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature(1)

+175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

SMA Flat Notch

°C/W

SMB

SMB Flat

Junction to lead, lead length = 10 mm

DO-201AD

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRM

0.4

2.0

µA

Tj = 125 °C

0.6

2.0

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 3 A

0.78

0.82

Tj = 125 °C

0.63

0.67

Tj = 25 °C

IF = 6 A

0.85

0.89

Tj = 125 °C

0.70

0.75

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

STPS3150

Characteristics

DS3283 - Rev 7

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