STPS3170 datasheet(2/13 Pages) STMICROELECTRONICS

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Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

VRRM

Repetitive peak reverse voltage, Tj = -40 °C

160

IF(RMS) Forward rms current

IF(AV)

Average forward current, δ = 0.5, square

wave

SMA Flat, SMA Flat Notch TL = 130 °C

SMB Flat

TL = 140 °C

IFSM

Surge non repetitive forward current

SMA Flat, SMA Flat Notch

tp = 10 ms sinusoidal

SMB Flat

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

210

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature(1)

+175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

SMA Flat, SMA Flat Notch

°C/W

SMB Flat

For more information, please refer to the following application note :

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

4.0

µA

Tj = 125 °C

0.73

4.0

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 3 A

0.82

Tj = 125 °C

0.63

0.67

Tj = 25 °C

IF = 6 A

0.89

Tj = 125 °C

0.70

0.75

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation: P = 0.59 x IF(AV) + 0.027 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS3170

Characteristics

DS10645 - Rev 2

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