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STF26N60DM6 数据表(PDF) 1 Page - STMicroelectronics |
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STF26N60DM6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) Features Order code VDS RDS(on) max. ID STF26N60DM6 600 V 195 mΩ 18 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STF26N60DM6 Product summary Order code STF26N60DM6 Marking 26N60DM6 Package TO-220FP Packing Tube N-channel 600 V, 165 mΩ typ., 18 A, MDmesh DM6 Power MOSFET in a TO ‑220FP package STF26N60DM6 Datasheet DS12863 - Rev 2 - September 2020 For further information contact your local STMicroelectronics sales office. www.st.com |
类似零件编号 - STF26N60DM6 |
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类似说明 - STF26N60DM6 |
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