STF26N60DM6 datasheet(2/12 Pages) STMICROELECTRONICS

2 / 12 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM(1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

dv/dt(2)

Peak diode recovery voltage slope

100

V/ns

di/dt(2)

Peak diode recovery current slope

1000

A/µs

dv/dt(3)

MOSFET dv/dt ruggedness

100

V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external heat sink

(t = 1 s, TC = 25 °C)

2.5

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. ISD ≤ 18 A, VDS (peak) < V(BR)DSS, VDD = 400 V.

3. VDS ≤ 480 V

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

4.17

°C/W

Rthj-amb(1)

Thermal resistance junction-ambient

°C/W

1. When mounted on FR-4 board of inch², 2oz Cu.

Table 3. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)

360

STF26N60DM6

Electrical ratings

DS12863 - Rev 2

page 2/12

STF26N60DM6 数据表(PDF) 2 Page - STMicroelectronics

STF26N60DM6 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

STF26N60DM6 数据表(PDF) 2 Page - STMicroelectronics

STF26N60DM6 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载