STP13N60DM2 datasheet(5/13 Pages) STMICROELECTRONICS

部件名	STP13N60DM2

功能描述	N-channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220 package

PDF	13 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 13 page

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

GIPG131120181354SOA

101

100

10-1

100

101

102

(A)

VDS (V)

tp =10 µs

tp =100 µs

tp =1 ms

tp =10 ms

tp =1 µs

single pulse

TJ≤150 °C

TC=25 °C

VGS=10 V

Operation in this area

is limited by R DS(on)

Figure 2. Thermal impedance

Figure 3. Output characteristics

GIPG070420161613OCH

I D

(A)

V DS (V)

V GS = 5 V

V GS = 8, 9, 10 V

V GS = 6 V

V GS = 7 V

Figure 4. Transfer characteristics

GIPG070420161613TCH

I D

(A)

V GS (V)

V DS = 20 V

Figure 5. Gate charge vs gate-source voltage

GIPG070420161614QVG

600

500

400

300

200

100

V GS

(V)

V DS

(V)

Q g (nC)

V DD = 480 V

I D = 11 A

V DS

Figure 6. Static drain-source on-resistance

GIPG070420161610RID

0.33

0.32

0.31

0.3

0.29

R DS(on)

(Ω)

I D (A)

V GS =10 V

STP13N60DM2

Electrical characteristics (curves)

DS12837 - Rev 1

page 5/13

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