STP13N60DM2 datasheet(4/13 Pages) STMICROELECTRONICS

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Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM (1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 11 A

1.6

trr

Reverse recovery time

ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

Qrr

Reverse recovery charge

252

IRRM

Reverse recovery current

5.6

trr

Reverse recovery time

ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 15. Test circuit

for inductive load switching and diode

recovery times)

170

Qrr

Reverse recovery charge

667

IRRM

Reverse recovery current

8.6

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage IGS = ±250 μA, ID = 0 A

±30

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for

additional external componentry.

STP13N60DM2

Electrical characteristics

DS12837 - Rev 1

page 4/13

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