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STTH30RQ06 数据表(PDF) 5 Page - STMicroelectronics |
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STTH30RQ06 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 20 page ![]() Figure 7. Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Z /R th (j-c) t h(j-c) t ( s ) p Single pulse Figure 8. Peak reverse recovery current versus dIF/dt (typical values) 0 5 10 15 20 0 50 100 150 200 250 300 350 400 450 500 IRM(A) dI / dt(A/ µs) F IF = 30 A IF = 7.5 A IF = 15 A VR = 400 V Tj = 125°C Figure 9. Reverse recovery time versus dIF/dt (typical values) 0 40 80 120 160 200 240 0 50 100 150 200 250 300 350 400 450 500 VR = 400 V Tj = 125°C IF = 30 A IF = 7.5 A IF = 15 A dIF /dt(A/µs) tRR(ns) Figure 10. Reverse recovery charges versus dIF/dt (typical values) 0 200 400 600 800 0 50 100 150 200 250 300 350 400 450 500 VR = 400 V Tj = 125°C IF = 30 A IF = 7.5 A IF = 15 A dIF /dt(A/µs) QRR(nC) Figure 11. Reverse recovery softness factor versus dIF/dt (typical values) 0.0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250 300 350 400 450 500 VR = 400 V Tj = 125°C dIF /dt(A/µs) Sfactor Figure 12. Relative variations of dynamic parameters versus junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 V R = 400 V Reference :Tj = 125 °C Tj(°C) IF = IF(AV) IRM SFACTOR QRR STTH30RQ06 Characteristics (curves) DS12164 - Rev 5 page 5/20 |
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