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STTH30RQ06 数据表(PDF) 6 Page - STMicroelectronics |
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STTH30RQ06 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 20 page ![]() Figure 13. Junction capacitance versus reverse voltage applied (typical values) 10 100 1000 1 10 100 1000 C(pF) F=1MHz V OSC=30mVRMS T j=25°C VR(V) Figure 14. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35 µm)(D²PAK and D²PAK HV) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 SCu(cm²) Rth(j-a) (°C/W) Figure 15. Relative variation of non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 tp(ms) IFSM(tp) / IFSM(10 ms) Figure 16. Relative variation of non-repetitive peak surge forward current versus initial junction temperature (sinusoidal waveform) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150 175 Tj(°C) IFSM(Tj) / IFSM(25 °C) STTH30RQ06 Characteristics (curves) DS12164 - Rev 5 page 6/20 |
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