Document Number: 91239

www.vishay.com

S11-0444-Rev. B, 14-Mar-11

1

This datasheet is subject to change without notice.

Power MOSFET

IRFP9240, SiHFP9240

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• Isolated Central Mounting Hole

•Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The

TO-247AC

package

is

preferred

for

commercial-industrial applications where higher power

levels preclude the use of TO-220AB devices. The

TO-247AC is similar but superior to the earlier TO-218

package because of its isolated mounting hole. It also

provides greater creepage distance between pins to meet

the requirements of most safety specifications.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

- 200 V

0.50

44

7.1

27

Configuration

Single

S

G

D

P-Channel MOSFET

TO-247AC

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFP9240PbF

SiHFP9240-E3

SnPb

IRFP9240

SiHFP9240

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 200

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 12

A

- 7.5

- 48

Linear Derating Factor

1.2

W/°C

790

mJ

- 12

A

15

mJ

Maximum Power Dissipation

150

W

dV/dt

- 5.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply