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MF4SAM3 数据表(PDF) 12 Page - NXP Semiconductors

部件名 MF4SAM3
功能描述  MIFARE SAM AV3 secure access module
PDF  31 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

MF4SAM3 数据表(HTML) 12 Page - NXP Semiconductors

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NXP Semiconductors
MF4SAM3
MIFARE SAM AV3 secure access module
MF4SAM3
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2019. All rights reserved.
Product short data sheet
Rev. 3.0 — 2 August 2019
COMPANY PUBLIC
561930
12 / 31
[1]
IO1, IO2 and IO3 source a transition current when being externally driven from HIGH to LOW. This transition current (ITL) reaches its maximum value
when the input voltage VI is approximately 0.5 VDD. Input current ITL is tested at input voltage VI = 0.5 VDD. Current IIL is tested at input voltage VI = 0.3 V.
Figure 5 shows the input characteristic of this quasi-bidirectional port mode.
[2]
External pull-up resistor 20 kΩ to VDD assumed. The worst case test condition for parameter VOH is present at minimum VDD. For class A supply voltage
conditions VDD = 4.5 V is the worst case with respect to the fix specification limit VOHmin = 3.8 V (0.844 VDD). The supply voltage related limit "0.7 VDD"is a
stricter requirement than the fix value 3.8 V at high VDD values (0.7 VDD = 3.85 V at VDD = 5.5 V). So, in the VDD range 4.5 V to 5.5 V, VOHmin is specified
as "the larger value of 0.7 VDD and 3.8 V, respectively". The VOHmin value (0.7 VDD) cannot be guaranteed in "quasi-bidirectional" mode at an output
current of IOH = -20 μA - the strong output drive mode must be used.
Table 7. Electrical DC characteristics of Inputs CLK and RST_N[1][2]
Conditions: VDD = 1.62 V to 5.5 V; VSS = 0 V; Tamb = -25 °C to +85 °C, unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Inputs CLK (when the IC is not in reset) and RST_N
VIH1
HIGH level input voltage
0.7 VDD
-
VDD + 0.3 V
VIL1
LOW level input voltage
-0.3
-
0.25 VDD V
IIH1
HIGH level input current
(weak pull-down is on)
0.7 VDD ≤ VI ≤ VDD;
Test conditions for the maximum
absolute value:
IIH1(max): VI = VDD,
VDD = VDD(max) of the respective
supply voltage class A, B or C
-
-
20
μA
IIL1
LOW level input current
(weak pull-down is on)
0 V ≤ VI ≤ 0.3 VDD;
Test conditions for the maximum
absolute value:
IIL1(max): VI = 0.3 VDD,
VDD = VDD(max) of the respective
supply voltage class A, B or C
0
-
20
μA
II1
Input current
(weak pull-down is on)
0 V ≤ VI ≤ VDD;
Test conditions for the maximum
absolute value:
II1(max): VI = VDD,
VDD = VDD(max) of the respective
supply voltage class A, B or C
0
-
20
μA
IILIH1
Leakage input current at
input voltage beyond VDD
VDD < VI ≤ VDD + 0.3 V; -25 °C ≤
Tamb ≤ +85 °C
Test conditions: VI = VDD + 0.3
V;
VDD = VDD(max) of the respective
supply voltage class A, B or C;
Tamb = +85 °C
-
-
20
μA
IILIL1
Leakage input current at
input voltage below VSS
-0.3 V ≤ VI < 0 V; -25 °C ≤ Tamb
+30 °C
Test conditions: VI = -0.3 V;
VDD = VDD(max) of the respective
supply voltage class A, B or C;
Tamb = +30 °C
-
-
-50
μA



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