MF4SAM3 datasheet(13/31 Pages) NXP

13 / 31 page

NXP Semiconductors

MF4SAM3

MIFARE SAM AV3 secure access module

MF4SAM3

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Product short data sheet

Rev. 3.0 — 2 August 2019

COMPANY PUBLIC

561930

13 / 31

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

-0.3 V ≤ VI < 0 V; +30 °C < Tamb

≤ +85 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

-200

μA

Input CLK (during IC reset)

VIH2

HIGH level input voltage

0.7 VDD

VDD + 0.3 V

VIL2

LOW level input voltage

-0.3

0.25 VDD V

IIH2

HIGH level input current

(weak pull-up is on)

0.7 VDD ≤ VI ≤ VDD;

Test conditions for the maximum

absolute value:

IIH2(max): VI = 0.7 VDD,

VDD = VDD(max) of the respective

supply voltage class A, B or C

-20

μA

IIL2

HIGH level input current

(weak pull-up is on)

0 V ≤ VI ≤ 0.3 VDD;

Test conditions for the maximum

absolute value:

IIL2(max): VI = 0V,

VDD = VDD(max) of the respective

supply voltage class A, B or C

-20

μA

II2

Input current

(weak pull-up is on)

0 V ≤ VI ≤ VDD;

Test conditions for the maximum

absolute value:

II2(max): VI = 0 V,

VDD = VDD(max) of the respective

supply voltage class A, B or C

-20

μA

IILIH2

Leakage input current at

input voltage beyond VDD

VDD < VI ≤ VDD + 0.3 V; -25 °C ≤

Tamb ≤ +85 °C

Test conditions: VI = VDD + 0.3

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

μA

-0.3 V ≤ VI < 0 V; -25 °C ≤ Tamb ≤

+30 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +30 °C

-50

μA

IILIL2

Leakage input current at

input voltage below VSS

-0.3 V ≤ VI < 0 V; +30 °C < Tamb

≤ +85 °C

Test conditions: VI = -0.3 V;

VDD = VDD(max) of the respective

supply voltage class A, B or C;

Tamb = +85 °C

-200

μA

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