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SIRC18DP 数据表(PDF) 4 Page - Vishay Siliconix

部件名 SIRC18DP
功能描述  N-Channel 30 V (D-S) MOSFET With Schottky Diode
PDF  9 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SIRC18DP 数据表(HTML) 4 Page - Vishay Siliconix

  SIRC18DP Datasheet HTML 1Page - Vishay Siliconix SIRC18DP Datasheet HTML 2Page - Vishay Siliconix SIRC18DP Datasheet HTML 3Page - Vishay Siliconix SIRC18DP Datasheet HTML 4Page - Vishay Siliconix SIRC18DP Datasheet HTML 5Page - Vishay Siliconix SIRC18DP Datasheet HTML 6Page - Vishay Siliconix SIRC18DP Datasheet HTML 7Page - Vishay Siliconix SIRC18DP Datasheet HTML 8Page - Vishay Siliconix SIRC18DP Datasheet HTML 9Page - Vishay Siliconix  
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SiRC18DP
www.vishay.com
Vishay Siliconix
S21-0843-Rev. D, 09-Aug-2021
4
Document Number: 76402
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
Safe Operating Area, Junction-to-Ambient
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
Axis Title
V
SD - Source-to-Drain Voltage (V)
2nd line
T
J = 150 °C
T
J = 25 °C
10
100
1000
10000
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
25
50
75
100
125
150
Axis Title
T
J - Temperature (C)
2nd line
V
DS = 10 V, 20 V
V
DS = 30 V
10
100
1000
10000
0
0.001
0.002
0.003
0.004
0.005
02468
10
Axis Title
V
GS - Gate-to-Source Voltage (V)
2nd line
T
J = 25 °C
T
J = 125 °C
I
D = 15 A
10
100
1000
10000
0
100
200
300
400
500
0.001
0.01
0.1
1
10
Axis Title
Time (s)
2nd line
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Axis Title
V
DS - Drain-to-Source Voltage (V)
(1) V
GS > minimum VGS at which RDS(on) is specified
I
DM limited
Limited by R
DS(on)
(1)
T
a = 25 °C
Single pulse
BVDSS limited
100 ms
10 ms
1 ms
100 μs
10 s
DC
1s
I
D limited



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