STTH20004TV1 datasheet(2/6 Pages) STMICROELECTRONICS

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STTH20004TV

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Table 4: Thermal resistance

Table 5: Static electrical characteristics (per diode)

Pulse test:

* tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.002 IF

(RMS)

Table 6: Dynamic characteristics (per diode)

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

Per diode

0.50

°C/W

Total

0.30

Rth(c)

Coupling

0.10

°C/W

When diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25 °C

VR = VRRM

100

µA

Tj = 125 °C

100

1000

VF **

Forward voltage drop

Tj = 25 °C

IF = 100 A

1.2

Tj = 150 °C

0.83

1.0

Symbol

Parameter

Test conditions

Min Typ Max Unit

trr

Reverse recovery

time

Tj = 25 °C

IF = 1 A dIF/dt = 50 A/µs VR = 30 V

100

IF = 1 A dIF/dt = 200 A/µs VR = 30 V

IRM

Reverse recovery

current

Tj = 125 °C IF = 100 A

VR = 200 V

dIF/dt = 100 A/µs

Sfactor Softness factor

Tj = 125 °C IF = 100 A

VR = 200 V

dIF/dt = 100 A/µs

0.4

tfr

Forward recovery

time

Tj = 25 °C

IF = 100 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

800

VFP

Forward recovery

voltage

Tj = 25 °C

IF = 100 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

2.6

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