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STTH20004TV1 数据表(PDF) 4 Page - STMicroelectronics |
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STTH20004TV1 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 6 page ![]() STTH20004TV 4/6 Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) Figure 8: Relative variations of dynamic parameters versus junction temperature Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 SFACTOR I F < 2 x IF(AV) V R=200V T j=125°C dIF/dt(A/µs) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 I RM S FACTOR I F=IF(AV) V R=200V Reference: T j=125°C Q RR t RR Tj(°C) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 50 100 150 200 250 300 350 400 450 500 VFP (V) I F=IF(AV) T j=125°C dIF/dt(A/µs) 0 200 400 600 800 1000 1200 1400 1600 1800 0 50 100 150 200 250 300 350 400 450 500 tfr (ns) IF=IF(AV) VFR=1.1 x VF max. Tj=125°C dIF/dt(A/µs) 100 1000 10000 1 10 100 1000 C(pF) F=1MHz V OSC=30mVRMS T j=25°C VR(V) |
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