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ADM3065EARZ-R7 数据表(PDF) 20 Page - Analog Devices

部件名 ADM3065EARZ-R7
功能描述  3.0 V to 5.5 V, 짹12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceivers
PDF  27 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADM3065EARZ-R7 数据表(HTML) 20 Page - Analog Devices

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ADM3061E/ADM3062E/ADM3063E/ADM3064E/ADM3065E/ADM3066E/ADM3067E/ADM3068E
Data Sheet
Rev. G | Page 20 of 27
THEORY OF OPERATION
IEC ESD PROTECTED RS-485
The ADM3061E/ADM3062E/ADM3063E/ADM3064E/
ADM3065E/ADM3066E/ADM3067E/ADM3068E are 3.0 V to
5.5 V, 50 Mbps RS-485 transceivers with IEC 61000-4-2 Level 4
ESD protection on the bus pins. These devices can withstand up to
±12 kV contact discharge on transceiver bus pins (A, B, Y, and Z)
without latch-up or damage. The ADM3061E/ADM3062E/
ADM3063E/ADM3064E have the same robust IEC 61000-4-2
ESD protection as the ADM3065E/ADM3066E/ADM3067E/
ADM3068E models, and operate at a lower, 500 kbps data rate.
HIGH DRIVER DIFFERENTIAL OUTPUT VOLTAGE
The ADM3061E/ADM3062E/ADM3063E/ADM3064E/
ADM3065E/ADM3066E/ADM3067E/ADM3068E have
characteristics that are optimized for use in PROFIBUS
applications. When powered at VCC ≥ 4.5 V, the ADM3061E/
ADM3062E/ADM3063E/ADM3064E/ADM3065E/ADM3066E/
ADM3067E/ADM3068E driver output differential voltage meets or
exceeds the PROFIBUS requirements of 2.1 V with a 54 Ω load.
IEC 61000-4-2 ESD PROTECTION
ESD is the sudden transfer of electrostatic charge between bodies at
different potentials either caused by near contact or induced by
an electric field. It has the characteristics of high current in a
short time period. The primary purpose of the IEC 61000-4-2
test is to determine the immunity of systems to external ESD
events outside the system during operation. IEC 61000-4-2
describes testing using two coupling methods: contact discharge
and air discharge. Contact discharge implies a direct contact
between the discharge gun and the equipment under test (EUT).
During air discharge testing, the charged electrode of the
discharge gun is moved toward the EUT until a discharge
occurs as an arc across the air gap. The discharge gun does not
make direct contact with the EUT. A number of factors affect
the results and repeatability of the air discharge test, including
humidity, temperature, barometric pressure, distance, and rate
of approach to the EUT. This method is a more accurate
representation of an actual ESD event but is not as repeatable.
Therefore, contact discharge is the preferred test method.
During testing, the data port is subjected to at least 10 positive
and 10 negative single discharges. Selection of the test voltage is
dependent on the system end environment.
Figure 45 shows the 8 kV contact discharge current waveform
as described in the IEC 61000-4-2 specification. Some of the
key waveform parameters are rise times of less than 1 ns and
pulse widths of approximately 60 ns.
tR = 0.7ns TO 1ns
IPEAK
I30ns
I60ns
30A
90%
16A
8A
10%
30ns
60ns
TIME
Figure 45. IEC 61000-4-2 ESD Waveform (8 kV)
Figure 46 shows the 8 kV contact discharge current waveform
from the IEC 61000-4-2 standard compared to the HBM ESD
8 kV waveform. Figure 46 shows that the two standards specify a
different waveform shape and peak current. The peak current
associated with an IEC 61000-4-2 8 kV pulse is 30 A, whereas
the corresponding peak current for HBM ESD is more than five
times less at 5.33 A. The other difference is the rise time of the
initial voltage spike, with the IEC 61000-4-2 ESD waveform having
a much faster rise time of 1 ns, compared to the 10 ns associated
with the HBM ESD waveform. The amount of power associated
with an IEC ESD waveform is much greater than that of an
HBM ESD waveform. The HBM ESD standard requires the
EUT to be subjected to three positive and three negative
discharges, whereas the IEC ESD standard requires 10 positive
and 10 negative discharge tests.
The ADM3061E/ADM3062E/ADM3063E/ADM3064E/
ADM3065E/ADM3066E/ADM3067E/ADM3068E with IEC
61000-4-2 ESD ratings is better suited for operation in harsh
environments compared to other RS-485 transceivers that state
varying levels of HBM ESD protection.
tR = 0.7ns TO 1ns
IPEAK
I30ns
I60ns
30A
90%
16A
8A
5.33A
10%
30ns
10ns
60ns
TIME
IEC 61000-4-2 ESD 8kV
HBM ESD 8kV
Figure 46. IEC 61000-4-2 ESD Waveform (8 kV) Compared to HBM ESD
Waveform (8 kV)



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