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ADM7151ACPZ-02-R7 数据表(PDF) 21 Page - Analog Devices |
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ADM7151ACPZ-02-R7 数据表(HTML) 21 Page - Analog Devices |
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21 / 24 page ![]() Data Sheet ADM7151 Rev. B | Page 21 of 24 TOTAL POWER DISSIPATION (W) 2.8 2.6 2.4 3.0 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 155 145 125 102 85 65 45 135 115 95 75 55 35 6400mm2 500mm2 25mm2 TJ MAX Figure 64. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC, TA = 25°C TOTAL POWER DISSIPATION (W) 1.8 2.0 2.2 2.4 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 60 70 80 90 100 110 120 130 160 150 140 6400mm2 500mm2 25mm2 TJ MAX Figure 65. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC, TA = 50°C TOTAL POWER DISSIPATION (W) 2.0 1.6 1.8 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 65 75 85 95 105 115 125 135 155 145 6400mm2 500mm2 25mm2 TJ MAX Figure 66. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC, TA = 85°C Thermal Characterization Parameter (ΨJB) When the board temperature is known, use the thermal characterization parameter, ΨJB, to estimate the junction temperature rise (see Figure 67 and Figure 68). Maximum junction temperature (TJ) is calculated from the board temperature (TB) and power dissipation (PD) using the following formula: TJ = TB + (PD × ΨJB) (5) The typical value of ΨJB is 15.1°C/W for the 8-lead LFCSP package and 17.9°C/W for the 8-lead SOIC package. TOTAL POWER DISSIPATION (W) 9.0 8.5 8.0 7.0 6.0 7.5 6.5 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 160 140 120 100 80 60 40 20 TB = 25°C TB = 50°C TB = 65°C TB = 85°C TJ MAX Figure 67. Junction Temperature vs. Total Power Dissipation for the 8-Lead LFCSP TOTAL POWER DISSIPATION (W) 5.5 7.5 7.0 6.5 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 160 140 120 100 80 60 40 20 TB = 25°C TB = 50°C TB = 65°C TB = 85°C TJ MAX Figure 68. Junction Temperature vs. Total Power Dissipation for the 8-Lead SOIC |
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