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SAMWIN
SW640
REV0.2
05.6.9
2/6
Electrical Characteristics (Tc=25 unless otherwise noted)
-
21
-
Gate-Drain Charge (Miller Charge)
Q
gd
-
6
-
Gate-Source Charge
Q
gs
nc
55
40
-
V
DS=320V,VGS=10V, ID=6.5A
(Note4,5)
Total Gate Charge
Q
g
200
70
-
Fall Time
t
f
300
150
-
Turn-off Delay Time
t
d(off)
230
80
-
Rise Time
t
r
n
s
50
25
-
V
DD=200V,ID=6.5A
R
G=50ohm
(Note4,5)
Turn-on Delay Time
t
d(on)
Dynamic Characteristics
60
45
-
Reverse Transfer Capacitance
Crss
240
180
-
Output Capacitance
Coss
pF
1750
1350
-
V
GS=0V,VDS=25V, f=1MHz
Input Capacitance
Ciss
Dynamic Characteristics
ohm
0.18
0.15
-
V
GS=10V,ID=3.25A
Static Drain-Source On-state
Resistance
R
DS(ON)
V
4.0
-
2.0
V
DS=VGS,ID=250uA
Gate Threshold Voltage
V
GS(th)
On Characteristics
nA
-100
-
-
V
GS=-30V, VDS=0V
Gate-Source Leakage Reverse
nA
100
-
-
V
GS=30V,VDS=0V
Gate-Source Leakage Current
I
GSS
V
DS=160V, Tc=125
uA
1
-
-
V
DS=200V, VGS=0V
Drain-Source Leakage Current
I
DSS
V/
-
0.2
-
I
D=250uA,referenced to 25
Breakdown Voltage Temperature
coefficient
BV
DSS/
Tj
V
-
-
200
V
GS=0V,ID=250uA
Drain- Source Breakdown Voltage
BV
DSS
Off Characteristics
Max
Typ
Min
Units
Value
Test Conditions
Parameter
Symbol
Source-Drain Diode Ratings and Characteristics
uc
-
1.47
-
Reverse Recovery Charge
Q
rr
ns
-
195
-
I
S=6.5A,VGS=0V,
dI
F/dt=100A/us
Reverse Recovery Time
t
rr
V
1.5
-
-
I
S=6.5A,VGS=0V
Diode Forward Voltage
V
SD
72
-
-
Pulsed Source Current
I
SM
A
18
-
-
Integral Reverse
p-n Junction Diode
in the MOSFET
Continuous Source Current
I
S
Unit.
Max.
Typ.
Min.
Test Conditions
Parameter
Symbol
NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L
=18.6mH,I
AS=18A,VDD=50V,RG=0ohm, Starting TJ=25
3. ISD
18A,di/dt
100A/us,V
DD
BV
DSS, Starting TJ=25
4. Pulse Test: Pulse Width
300us,Duty Cycle
2%
5. Essentially independent of operating temperature.
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