SAMWIN
SW640
REV0.2
05.6.9
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25
)
General Description
This power MOSFET is produced in SAMWIN with
advanced VDMOS process, planar stripe.This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for
half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching
mode power appliances.
Absolute Maximum Ratings
300
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
T
L
-55~+150
Operating junction temperature &Storage temperature
T
STG,TJ
W/
1.10
Derating Factor above 25
W
139
Total Power Dissipation (@Tc=25
)
P
D
V/ns
5.5
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
mJ
13.9
Repetitive Avalanche Energy
(Note 1)
E
AR
mJ
250
Single Pulsed Avalanche Energy
(Note 2)
E
AS
V
30
Gate to Source Voltage
V
GS
A
72
Drain Current Pulsed
(Note 1)
I
DM
A
11.4
Continuous Drain Current (@Tc=100
)
A
18
Continuous Drain Current (@Tc=25
)
I
D
V
200
Drain to Source Voltage
V
DSS
Units
Value
Parameter
Symbol
Thermal Characteristics
/ W
62.5
-
-
Thermal Resistance, Junction-to-Ambient
R
JA
/ W
0.5
-
-
Thermal Resistance, Case-to-Sink
R
CS
/ W
0.9
-
-
Thermal Resistance, Junction-to-Case
R
JC
Max
Typ
Min
Units
Value
Parameter
Symbol
1/6
: 200 V
: 0.18 ohm
: 18A
: 40 nc
: 139 W
G
S
D
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