BLF573 datasheet(3/16 Pages) AMPLEON

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BLF573_BLF573S#4

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Product data sheet

Rev. 4 — 1 September 2015

3 of 16

BLF573; BLF573S

HF / VHF power LDMOS transistor

6. Characteristics

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 3.75 mA

110

--V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 375 mA

1.25

1.7

2.25

VGSq

gate-source quiescent voltage

VDS =50 V; ID = 900 mA

1.45

1.95

2.45

IDSS

drain leakage current

VGS =0V; VDS = 50 V

--4.2

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

IGSS

gate leakage current

VGS = 11 V; VDS = 0 V

420

gfs

forward transconductance

VDS =10 V; ID = 18.75 A

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID = 12.49 A

-0.09



Crs

feedback capacitance

VGS =0V; VDS =50 V;

f=1MHz

-2.3

-pF

Ciss

input capacitance

VGS =0V; VDS =50 V;

f=1MHz

300

Coss

output capacitance

VGS =0V; VDS =50 V;

f=1MHz

103

Table 7.

RF characteristics

Mode of operation: CW; f = 225 MHz; RF performance at VDS =50V; IDq = 900 mA; Tcase = 25 C;

unless otherwise specified; in a class-AB production test circuit.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 300 W

27.2

28.4

RLin

input return loss

PL = 300 W

D

drain efficiency

PL = 300 W

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