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BLF573 数据表(PDF) 2 Page - Ampleon Netherlands B.V. |
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BLF573 数据表(HTML) 2 Page - Ampleon Netherlands B.V. |
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2 / 16 page ![]() BLF573_BLF573S#4 All information provided in this document is subject to legal disclaimers. © Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 — 1 September 2015 2 of 16 BLF573; BLF573S HF / VHF power LDMOS transistor 2. Pinning information [1] Connected to flange. 3. Ordering information 4. Limiting values 5. Thermal characteristics [1] Rth(j-c) is measured under RF conditions. Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF573 (SOT502A) 1drain 2gate 3source [1] BLF573S (SOT502B) 1drain 2gate 3source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 Table 3. Ordering information Type number Package Name Description Version BLF573 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLF573S - earless flanged LDMOST ceramic package, 2 leads SOT502B Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 110 V VGS gate-source voltage 0.5 +11 V ID drain current - 42 A Tstg storage temperature 65 +150 C Tj junction temperature - 225 C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-c) thermal resistance from junction to case Tcase =80 C; PL = 300 W [1] 0.21 K/W |
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